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SK hynix has developed new 4D NAND flash with a whopping 238 layers, paving the way for fast and spacious new SSDthe company announced.
Unveiled on stage at the Flash Memory Summit in Santa Clara, the new memory chip is described as the “world’s first 512Gb 238-layer TLC 4D NAND” and is expected to enter mass production in the first half of 2023.
Compared to the previous 176-layer model, the new NAND is said to offer 50% faster data transfer speeds (at 2.4Gb/sec), 21% greater energy efficiency for reading data and a 34% increase in overall productivity.
The arrival of the 238-layer product will see SK hynix grab the record for the world’s tallest NAND stack from rival manufacturer Micron, whose latest model features 232 layers.
238-level 4D NAND flash
NAND flash is a type of non-volatile memory found in all kinds of storage devices, from memory cards, USB sticks and portable drives on SSD for servers and client devices.
The general trend in NAND flash development is toward lowering cost per capacity and increasing storage density, effectively eliminating the last remaining use cases for traditional hard drives. The arrival of the 238-layer product from SK hynix marks another step in this journey.
Unlike other NAND products on the market, the latest chips in the company’s range feature a ‘4D’ architecture, where the logic circuits are placed below the storage cells. SK hynix says this design allows for “smaller cell area per unit, leading to higher production efficiency.”
“SK hynix secured world-leading competitiveness in terms of cost, performance and quality by introducing its 238-layer product based on its 4D NAND technologies,” said Jungdal Choi, Head of NAND Development at SK hynix.
Perhaps contrary to expectations, the new 238-layer NAND will arrive in customer devices first, which will give content creators and PC gamers reason to be excited. Only later will the new chip come smartphones and high capacity servers.
SK hynix also revealed that it is developing a 238-layer 1Tb product, which will double the storage density of the last chip when it arrives next year. “We will continue to innovate to find innovations in technological challenges,” Choi added.
Via Blocks and Files (opens in new tab)
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